Samsung reports: The latest semiconductors hold a vast amount of information inside tiny microchips that are becoming smaller and smaller with each iteration.
In order to reduce the size of semiconductors, FinFET architecture was introduced to further scale gate length. As Samsung designed even smaller microchips, new challenges arose, and achieving below 4-5 nm has proved difficult when using the current FinFET transistor architecture. This observation has spurred the company to innovate and implement its new Gate-All-Around (GAA) transistors.
Samsung’s GAA redesigns the transistor, making it more power-efficient and better-performing than the existing Multi-Bridge Channel FET (MBCFET™) that utilize stacked nanosheets. Samsung’s patented MBCFET™ is formed as a nanosheet, allowing for a larger current and simpler device integration.
Take a look at the infographic below to learn more about how Samsung’s GAA is advancing the future of semiconductor technology.
Photo credit: The feature image and the infographic are owned by Samsung.
Source: Samsung press release
