In order to reduce the size of semiconductors, FinFET architecture was introduced to further scale gate length. As Samsung designed even smaller microchips, new challenges arose, and achieving below 4-5 nm has proved difficult when using the current FinFET transistor architecture. This observation has spurred the company to innovate and implement its new Gate-All-Around (GAA) transistors.
Samsung’s GAA redesigns the transistor, making it more power-efficient and better-performing than the existing Multi-Bridge Channel FET (MBCFET™) that utilize stacked nanosheets. Samsung’s patented MBCFET™ is formed as a nanosheet, allowing for a larger current and simpler device integration.
Take a look at the infographic below to learn more about how Samsung’s GAA is advancing the future of semiconductor technology.
Photo credit: The feature image and the infographic are owned by Samsung.
Source: Samsung press release